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Fujieda, Shinji*; Miura, Yoshinao*; Saito, Motofumi*; Teraoka, Yuden; Yoshigoe, Akitaka
Microelectronics Reliability, 45(1), p.57 - 64, 2005/01
Times Cited Count:11 Percentile:51.31(Engineering, Electrical & Electronic)To characterize the interface defects that are responsible for the negative-bias temperature instability (NBTI) of a thin plasma-nitrided SiON/Si system, we carried out inerface trap density measurements, electron-spin resonance spectroscopy and synchrotron radiation XPS. The NBTI was shown to occur mainly through the dehydrogenation of the interfacial Si dangling bonds (P defects). Although we suggest that non- P defects are also generated by the negative-bias temperature stress, nitrogen dangling bonds do not seem to be included. The plasma-nitridation process was confirmed to generate sub-oxides at the interface and thus increase the interface trap density. Furthermore, it was found that the nitridation induces another type of P defect than that at pure-SiO/Si interfacec. Such an increase and structural change of the interfacial defects are likely the causes of the nitridation-enhanced NBTI.
*; *; *; Kazumata, Y.
Journal of the Physical Society of Japan, 42(6), p.1900 - 1905, 1977/06
Times Cited Count:11no abstracts in English